Simplified power-down mode control circuit utilizing active mode operation control signals

ABSTRACT

A power-down control circuit utilizes the control signals employed in an active mode operation to operate when a power-down mode entry command is received during an active mode operation. The circuit is simplified requiring less area for devising the control circuit while lowering power consumption. The power-down control circuit in a semiconductor memory device includes at least a clock enable buffer unit, an external clock buffer unit, a latch unit, a control circuit for controlling internally operating clocks employed in active mode operation by using a control signal used in the active mode operation when a power-down mode entry command is received during the active mode operation, and a clock enable generation circuit for outputting clock enable signals for enabling entry to the power-down mode by using the clock control signals, when the external clock pulse signal is low level.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2006-0003976 filed on Jan. 13, 2006, which is incorporatedherein by reference in its entirety. The present application is acontinuation of U.S. Ser. No. 11/652,786 filed on Jan. 12, 2007, nowU.S. Pat. No. 7,420,873.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor memory device and moreparticularly to a power-down mode control circuit for controlling theinternal operation clocks in order to enter into a power-down modeduring an active mode operation.

In general, a semiconductor memory device is designed to achieve highcell capacity, high operational speed, and low power consumption. Apower-down mode is available in a semiconductor memory device tominimize the amount of driving current consumed when data accessoperations are not performed.

FIG. 1 is a timing diagram showing the conventional entry and exittiming of a power-down mode in a conventional semiconductor memorydevice.

In a conventional semiconductor memory device of FIG. 1, a clock enablesignal CKE is changed from a high level to a low level when enteringinto a power-down mode, and the clock enable signal CKE is changed froma low level to a high level when exiting from the power-down mode.

The clock enable signal CKE interfaces with the external chipset evenduring a power-down mode of the semiconductor memory device and servesas a reference signal for determining whether to transmit the clocksignal CLK (which is inputted from the external chipset) to thesemiconductor memory's core region.

FIG. 2 is a timing diagram explaining the conventional way of enteringinto a power-down mode from a read operation in a conventionalsemiconductor memory device. FIG. 3 is a timing diagram explaining theconventional way of entering into a power-down mode from a writeoperation in a conventional semiconductor memory device. FIG. 4 is atiming diagram explaining the conventional way of entering into apower-down mode from a write operation with an auto-precharge command ina conventional semiconductor memory device.

It is noted that the operations for entering into a power-down mode froma read operation with an auto-precharge command (ie., read withautoprecharge) is same as the operations for entering into a power-downmode from a read operation, and thus the description for the above willnot be made in a redundant manner.

Referring to FIGS. 2-4, ‘DQ_BL8’ is a data signal inputted when a burstlength is 8, and ‘DQ_BL4’ is a data signal inputted when a burst lengthis 4. Further, ‘RL’ denotes a read latency; ‘WL’ denotes a writelatency; and ‘tRDPDEN’ denotes a time between the start of readoperation and the point of entry to the power-down mode. ‘tWRPDEN’denotes the time between the start of a write operation and the point ofentry to the power-down mode; ‘tWTR’ (i.e., a write to read commanddelay) denotes the time required for processing the inputted data (thatis, the time needed for the write data processing); and ‘tWR’ denotes awrite recovery time.

Conventionally as shown in FIGS. 2-4, when a power-down mode entrycommand is received while an active mode operation (i.e., a readoperation, a read operation with an auto-precharge command, a writeoperation, or a write operation with an auto-precharge command) is inprogress, the entry to the power-down mode is implemented aftercompleting the active mode operation in progress.

That is, when a conventional semiconductor memory device enters into apower-down mode, all input buffers are turned off to decrease currentconsumption, and all internally operating clocks are also disabled,except the clocks associated with the active mode operation in progress.If the power-down mode entry command is received during an active modeoperation, the clock(s) associated with the active mode operation inprogress is not disabled in order to complete the active mode operationin progress.

Therefore, when the power-down mode entry command is received in aconventional memory device during an active mode, the internallyoperating clocks are selectively controlled in order to enter into apower-down mode, and the control is conducted using the control signalsoutputted from a circuit provided in the semiconductor memory devicethat generates the clock enable signals. In other words, when theconventional semiconductor memory device enters into a power-down mode,all clocks operating in the conventional memory device are disabledusing the various types of clock enable signals cke_com, cke_clk, andcke_com1, all of which are outputted from a power-down mode controlcircuit.

Here, the clock enable signal cke_com is the signal for turning off thecommands and the address buffers; the clock enable signal cke_clk is thesignal for disabling internally operating clocks excluding thoseemployed in the active mode operation; and the clock enable signalcke_com1 is the signal for disabling the internally operating clocksemployed in the active mode operation and a delay locked loop (DLL)clock.

Further, in a conventional semiconductor memory device as shown in FIG.5, when the power-down mode entry command is received during an activemode operation, the clock enable signal cke_com1 is maintained in adisabled state (that is, in a low level), and then the clock enablesignal cke_com1 is changed to an enabled state (that is, in a highlevel) after completing the active mode operation to disable theinternally operating clocks operated in the active mode operation and inassociation with the DLL.

Hence, a conventional power-down mode control circuit in a semiconductormemory device requires a control circuit (not shown) for outputting theclock enable signal cke_com1 of high level at the time of completing theactive mode operation. The conventional control circuit for outputtingthe clock enable signal cke_com1 receives signals including a CAS pulsesignal casp6 of a high level pulse outputted during read and writeoperations; a CAS latency CL for a read operation; a write latency WLfor a write operation; and a write recovery time tWR for auto-precharge.

The conventional control circuit uses the above-mentioned signals (i.e.,the CAS pulse signal casp6, the CAS latency CL, the write latency WL,and the write recovery time tWR) to output a control signal cke_ctrl bycounting each of them starting from each command to know the time atwhich the active mode operation is complete. Accordingly, a conventionalsemiconductor memory device enables the clock enable signal cke_com1 atthe time of completing the active mode operation using the controlsignal cke_ctrl outputted from the control circuit.

Therefore, the control circuit is required to count each of the CASpulse signal casp6, the CAS latency CL, the write latency WL, and thewrite recovery time tWR since the beginning of each command.

To perform such counting operations, the control circuit requires: aplurality of D flip-flops for counting the CAS latency CL; a pluralityof D flip-flops for counting the write latency WL; and a plurality of Dflip-flops for counting the write recovery time tWR; and multiplexersfor the respective D flip-flops, all of which could result in severaltens of D flip-flops depending on the specification for the CAS latencyCL, write latency WL, and the write recovery time tWR.

Because a conventional memory device requires a plurality of Dflip-flops and a plurality of multiplexers in the control circuit, awide area must be set aside to devise the power-down mode controlcircuit having the above-mentioned control circuit utilizing the Dflip-flops.

Further, this increases the current consumption to drive the Dflip-flops and multiplexers in a conventional power-down mode controlcircuit.

SUMMARY OF THE INVENTION

Accordingly, the present invention solves the problems occurring in therelated art. The present invention provides a power-down mode controlcircuit wherein, when a power-down mode entry command is received,control of entry to a power-down mode after completion of active modeoperation in progress is implemented by generating a control signalcorresponding to the active mode operation in progress, therebysimplifying the configuration of the control circuit, decreasing thearea occupied by the control circuit in a semiconductor memory device,and reducing power consumption.

According to one aspect of the present invention, there is provided asemiconductor memory device comprising first buffer unit for outputtinga first clock pulse signal by buffering an external clock enable signalinputted when entering a power-down mode; second buffer unit foroutputting a second clock pulse signal by buffering an external clocksignal; first latch unit for outputting a first clock control signal forcontrolling internally operating clocks, by latching the first andsecond clock pulse signals; a control circuit for outputting a secondclock control signal for controlling internally operating clocksemployed in active mode operation, by using a control signal used in theactive mode operation, when a power-down mode entry command is receivedduring the active mode operation; and a clock enable generation circuitfor outputting first through third clock enable signals for enablingentry to the power-down mode, by using the first and second clockcontrol signals, when the second clock pulse signal is disabled.

According to another aspect of the present invention, the active modeoperation includes at least one of read operation, read operation withan auto-precharge command, write operation, and write operation with anauto-precharge command.

According to another aspect of the present invention, the controlcircuit comprises an end pulse generation section for outputting an endpulse signal for ending the active mode operation, by buffering thecontrol signal; and a clock control signal generation section foroutputting the second clock control signal for controlling end of theactive mode operation, by latching the second clock enable signaloutputted from the clock enable generation circuit and the end pulsesignal.

According to another aspect of the present invention, the control signalis any one of an off signal which is enabled while all correspondingdata is inputted in any one of the read operation and the read operationwith an auto-precharge command, a blend signal which is enabled when awrite data processing time is ended in the write operation, and anauto-precharge signal which is enabled when the auto-precharge commandis inputted.

According to another aspect of the present invention, the end pulsegeneration section comprises third buffer unit for outputting aread/auto-precharge end pulse signal for ending the read operation, bybuffering the off signal; fourth buffer unit for outputting awrite/auto-precharge end pulse signal for ending any one of the writeoperation and auto-precharge operation, by selectively buffering theblend signal and the auto-precharge signal depending upon a state of anaddress signal which is disabled in the write operation and enabled inthe auto-precharge operation; and first combining unit for outputtingthe end pulse signal, by logically combining output signals of the thirdand fourth buffer unit.

According to another aspect of the present invention, the third bufferunit comprises a first inverter for receiving the off signal which isdelayed by delay unit; a first NAND gate for NANDing the off signal andan output signal of the first inverter; and a second inverter forreceiving an output signal of the first NAND gate and outputting theread/auto-precharge end pulse signal.

According to another aspect of the present invention, the fourth bufferunit outputs the write/auto-precharge end pulse signal for ending thewrite operation, by buffering the blend signal when the address signalis enabled, and outputs the write/auto-precharge end pulse signal forending the auto-precharge operation, by buffering the auto-prechargesignal when the address signal is disabled.

According to another aspect of the present invention, the fourth bufferunit comprises a first transfer gate for outputting the blend signalwhen the address signal is disabled and the auto-precharge signal whenthe address signal is enabled; a second NAND gate for NANDing a readdisable signal which is enabled during the write operation and disabledduring the read operation and an output signal of the first transfergate; and a third inverter for receiving an output signal of the secondNAND gate and outputting the write/auto-precharge end pulse signal.

According to another aspect of the present invention, the firstcombining unit comprises a NOR gate for NORing the read/auto-prechargeend pulse signal and the write/auto-precharge end pulse signal; and afourth inverter for receiving an output signal of the NOR gate andoutputting the end pulse signal.

According to another aspect of the present invention, the clock controlsignal generation section comprises second latch unit for outputting afirst latch signal by latching the third clock enable signal, when a CASpulse signal, which generates a pulse signal when any one of a readcommand and a write command is received, is enabled; third latch unitfor outputting a second latch signal by latching the first latch signalwhen the end pulse signal is high level; fourth latch unit foroutputting a third latch signal by latching the end pulse signal; andsecond combining unit for outputting the second clock control signal forcontrolling the end of the active mode operation, by logically combiningthe second and third latch signals.

According to another aspect of the present invention, the second latchunit comprises a fifth inverter for receiving the CAS pulse signal; asecond transfer gate for outputting the second clock enable signal whenan output signal of the fifth inverter is low level; a PMOS transistorfor determining whether to output a source voltage depending upon astate of a power-up signal which is enabled not in the power-down modeand disabled in the power-down mode; and a first latch for outputtingthe first latch signal, by latching an output signal of the secondtransfer gate when the power-up signal is disabled and the sourcevoltage when the power-up signal is enabled.

According to another aspect of the present invention, the third latchunit comprises a third transfer gate for outputting the first latchsignal when the end pulse signal is high level; a first NMOS transistorfor determining whether to output a ground voltage depending upon astate of the power-up signal which is enabled not in the power-down modeand disabled in the power-down mode; a sixth inverter for receiving thesecond clock enable signal outputted from the clock enable generationcircuit; a second NMOS transistor for determining whether to output theground voltage depending upon a logic level of a signal outputted fromthe sixth inverter; and a second latch for outputting the second latchsignal by selectively latching an output signal of the third transfergate and the ground voltage depending upon the output signals of thethird transfer gate, the first NMOS transistor and the second NMOStransistor.

According to another aspect of the present invention, the fourth latchunit comprises a seventh inverter for receiving the power-up signalwhich is enabled not in the power-down mode and disabled in thepower-down mode; a third latch for logically combining an output signalof the seventh inverter, the end pulse signal and the CAS pulse signal,and latching a logically combined signal; and an eighth inverter forreceiving an output signal of the third latch and outputting the thirdlatch signal.

According to another aspect of the present invention, the secondcombining unit comprises a third NAND gate for NANDing the second latchsignal and the third latch signal; and a fourth NAND gate for NANDing anoutput signal of the third NAND gate and the second clock enable signaloutputted from the clock enable generation circuit, and outputting thesecond clock control signal.

According to another aspect of the present invention, the clock enablegeneration circuit comprises a first enable signal generation sectionfor outputting the first clock enable signal by latching the first clockcontrol signal when the second clock pulse signal is low level; a secondenable signal generation section for outputting the second clock enablesignal by buffering the first clock control signal; and a third enablesignal generation section for outputting the third clock enable signalby buffering the second clock control signal.

According to another aspect of the present invention, the first clockenable signal is a signal for turning off command and address buffers,the second clock enable signal is a signal for disabling internallyoperating clocks excluding those employed in the active mode operation,and the third clock enable signal is a signal for disabling theinternally operating clocks employed in the active mode operation.

According to another aspect of the present invention, the first andsecond clock enable signals are enabled when the power-down mode entrycommand is received, and the third clock enable signal is enabled whenthe active mode operation is completed.

According to another aspect of the present invention, the first enablesignal generation section comprises a ninth inverter for receiving thepower-up signal which is enabled not in the power-down mode and disabledin the power-down mode; a third NMOS transistor for determining whetherto output a ground voltage depending upon an output signal of the ninthinverter; a fourth latch for latching the first clock control signalwhen the power-up signal is disabled and the ground voltage when thepower-up signal is enabled; a fourth transfer gate for outputting anoutput signal of the fourth latch when the second clock pulse signal islow level; a fifth latch for latching an output signal of the fourthtransfer gate; and a tenth inverter for receiving an output signal ofthe fifth latch and outputting the first clock enable signal.

According to still another aspect of the present invention, the secondenable signal generation section comprises an eleventh inverter forreceiving the first clock control signal when the power-up signal whichis enabled not in the power-down mode and disabled in the power-downmode is enabled, and a ground voltage when the power-up signal isdisabled; a twelfth inverter for receiving an output signal of theeleventh inverter; and a thirteenth inverter for receiving an outputsignal of the twelfth inverter and outputting the second clock enablesignal.

According to a still further aspect of the present invention, the thirdenable signal generation section comprises a fourteenth inverter forreceiving the second clock control signal; a fifth NAND gate for NANDingthe output signal of the eleventh inverter and an output signal of thefourteenth inverter; and a fifteenth inverter for receiving an outputsignal of the fifth NAND gate and outputting the third clock enablesignal.

BRIEF DESCRIPTION OF THE DRAWINGS

These and various other features as well as advantages of the presentinvention will be apparent after a reading of the following detaileddescription and a review of the associated drawings, in which:

FIG. 1 is a timing diagram on entry to and exit from a power-down modein a conventional semiconductor memory device;

FIG. 2 is a timing diagram explaining entry to the power-down mode fromread operation in the conventional semiconductor memory device;

FIG. 3 is a timing diagram explaining entry to the power-down mode fromwrite operation in the conventional semiconductor memory device;

FIG. 4 is a timing diagram explaining entry to the power-down mode fromwrite operation with an auto-precharge command in the conventionalsemiconductor memory device;

FIG. 5 is a timing diagram explaining operation when a power-down modeentry command is received during operation under an active mode in theconventional semiconductor memory device;

FIG. 6 is a circuit diagram for illustrating a circuit for entry to apower-down mode in a semiconductor memory device in accordance with anembodiment of the present invention;

FIG. 7 is a circuit diagram of a power-down mode control circuitaccording to an embodiment of the present invention;

FIG. 8 is a circuit diagram of a clock enable generation circuitaccording to an embodiment of the present invention;

FIG. 9 is a timing diagram explaining entry to the power-down mode froma read operation in the semiconductor memory device according to anembodiment of the present invention;

FIG. 10 is a timing diagram explaining entry to the power-down mode froma write operation in the semiconductor memory device according to anembodiment of the present invention; and

FIG. 11 is a timing diagram explaining entry to the power-down mode froma write operation with an auto-precharge command in the semiconductormemory device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Reference will now be made in greater detail to a preferred embodimentof the invention, an example of which is illustrated in the accompanyingdrawings. Wherever possible, the same reference numerals will be usedthroughout the drawings and the description to refer to the same or likeparts.

FIG. 6 is a circuit block diagram for illustrating a circuit forentering into a power-down mode in a semiconductor memory device inaccordance with an embodiment of the present invention.

Referring to FIG. 6, a semiconductor memory device according to anembodiment of the present invention includes, inter alia:

(1) a clock enable buffer unit 1000 that receives an external clockenable signal CKE when entering a power-down mode and outputs theinputted CKE signal as a buffered clock enable pulse signal ckep;

(2) an external clock buffer unit 2000 that receives an external clocksignal CLK and outputs the inputted CLK signal as a buffered externalclock pulse signal clkp;

(3) a latch unit 3000 that outputs a clock control signal cke_ctrl1 forcontrolling the internally operating clocks by latching the externalclock pulse signal clkp and the clock enable pulse signal ckep inputtedto the latch unit 3000;

(4) a control circuit 4000 for outputting a clock control signalcke_ctrl2 that controls the internal clocks operating in an active modeoperation (i.e., a read operation, a read operation with anauto-precharge command, a write operation, or a write operation with anauto-precharge command) by using the control signals used in the activemode operation when a power-down mode entry command is received duringan active mode operation; and

(5) a clock enable generation circuit 5000 for outputting clock enablesignals cke_com, cke_clk and cke_com1 by using the clock control signalscke_ctrl1 and cke_ctrl2 when the external clock pulse signal clkp is alow level for enabling the entry into the power-down mode.

FIG. 7 is a circuit diagram of a power-down mode control circuit 4000according to an embodiment of the present invention. Referring to FIG.7, the control circuit 4000 according to an embodiment of the presentinvention includes:

(1) an end pulse generation section 4100 that encodes the controlsignals used in an active mode operation (i.e., an off signal outoff, awrite end signal yblend, or an auto-precharge signal apcg) and outputsan end pulse signal rd_wt_apcg_end for ending the active mode operation;and

(2) a clock control signal generation section 4200 that outputs theclock control signal cke_ctrl2 for controlling the end of the activemode operation by latching the clock enable signal cke_clk outputtedfrom the clock enable generation circuit 5000 and the end pulse signalrd_wt_apcg_end.

The off signal outoff is enabled (i.e., a low level) while all data isinputted during a read operation or the read operation with anauto-precharge command; the write end signal yblend is enabled (i.e., ahigh level pulse) after the lapse of a write data processing time tWTRin a write operation; and the auto-precharge signal apcg is enabled(i.e., a high level pulse) when the auto-precharge command is received.

The end pulse generation section 4100 comprises two buffer sections 4110and 4120 and a combining section 4130. The clock control signalgeneration section 4200 comprises three latch sections 4210, 4220, and4230, and one combining section 4240. The sections 4110, 4120, 4130,4210, 4220, and 4230 can preferably be configured as described below.

The buffer section 4110 in the end pulse generation section 4100includes: an inverter 4112 for receiving the off signal outoff delayedthrough a delay element 4111; a NAND gate 4113 performing a logical NANDoperation (hereinafter “NANDing”) the off signal outoff and the outputsignal of the inverter 4112; and an inverter 4114 for receiving theoutput signal of the NAND gate 4113 and outputting a read/auto-prechargeend pulse signal rd_apcg_end.

The buffer section 4110 configured in this way receives and buffers theoff signal outoff, which is in a low level while all data is beinginputted in a read operation or a read operation with an auto-prechargecommand, and outputs the read/auto-precharge end pulse signalrd_apcg_end.

The buffer section 4120 comprises: a transfer gate 4121 for outputtingthe write end signal yblend when an address signal add is disabled(i.e., a low level) and the auto-precharge signal apcg when the addresssignal add is enabled (i.e., a high level); a NAND gate 4122 for NANDingthe output signal of the transfer gate 4121 and a read disable signalwt_rdb; and an inverter 4123 for receiving the output signal of the NANDgate 4122 and outputting a write/auto-precharge end pulse signalwt_apcg_end.

Here, the address signal add is disabled during a write operation andenabled during an auto-precharge operation. Also, the read disablesignal wt_rdb is enabled (i.e., a high level) during a write operationand is disabled (i.e., a low level) during a read operation.

The buffer section 4120 configured in this way outputs thewrite/auto-precharge end pulse signal wt_apcg_end for ending the writeoperation or the auto-precharge operation depending on the logic levelof the address signal add. More specifically, when the address signaladd is a low level, the buffer section 4120 receives and buffers thewrite end signal yblend and outputs the write/auto-precharge end pulsesignal wt_apcg_end for ending the write operation. When the addresssignal add is a high level, the buffer section 4120 receives and buffersthe auto-precharge signal apcg and outputs the write/auto-precharge endpulse signal wt_apcg_end for ending the auto-precharge operation.

The combining section 4130 comprises: a NOR gate 4131 for performing alogical NOR operation (hereinafter “NORing”) the output signal of theinverter 4114 and the output signal of the inverter 4123; and aninverter 4132 for receiving the output signal of the NOR gate 4131 andoutputting the end pulse signal rd_wt_apcg_end.

The combining section 4130 configured in this way (1) outputs the endpulse signal rd_wt_apcg_end for ending the read when the read operationis completed, and (2) outputs the end pulse signal rd_wt apcg_end forending the write when the write operation is completed, and (3) outputsthe end pulse signal rd_wt_apcg_end for ending the auto-precharge whenthe auto-precharge operation is completed.

Next, in the clock control signal generation section 4200, the latchsection 4210 comprises: an inverter 4211 for receiving a CAS pulsesignal casp6; a transfer gate 4212 for outputting the clock enablesignal cke_clk when the output signal of the inverter 4211 is a lowlevel; a PMOS transistor 4213 for determining whether to output a sourcevoltage VDD depending on the logic level of the power-up signal pwrup;and a latch 4214 for outputting a latch signal cke_cas by latching theoutput signal of the transfer gate 4212 when the power-up signal pwrupis disabled and the source voltage VDD when the power-up signal pwrup isenabled.

Here, the CAS pulse signal casp6 is enabled (i.e., a high level pulse)in a read or write operation. Also, the power-up signal pwrup is enabled(i.e., a high level) when not in a power-down mode and disabled (i.e., alow level) when in a power-down mode.

The latch section 4210 configured in this way latches the clock enablesignal cke_clk when a read or write command is received (that is, whenthe CAS pulse signal casp6 is enabled and the power up signal pwrup isdisabled) and then outputs the latch signal cke_cas when entering into apower-down mode (that is, the power up signal pwrup is enabled) bylatching the source voltage VDD. In other words, the latch signalcke_cas outputted from the latch section 4210 is obtained by latchingthe clock enable signal cke_clk in a read or write operation and then bylatching the source voltage VDD in a power-down mode operation.

Moreover, the latch section 4220 comprises: a transfer gate 4221 foroutputting the latch signal cke_cas when the end pulse signalrd_wt_apcg_end is a high level; an NMOS transistor 4222 for determiningwhether to output a ground voltage VSS depending on the logic level ofthe power-up signal pwrup; an inverter 4223 for receiving the clockenable signal cke_clk outputted from the clock enable generation circuit5000; an NMOS transistor 4224 for determining whether to output theground voltage VSS depending upon the logic level of the signaloutputted from the inverter 4223; and a latch 4225 for outputting alatch signal cke_rd_wta by selectively latching the output signal of thetransfer gate 4221 and the ground voltage VSS depending on the outputsignals of the transfer gate 4221, the NMOS transistor 4222, and theNMOS transistor 4224.

The latch section 4220 configured in this way (1) latches the groundvoltage VSS when the power-up signal pwrup is a high level, then (2)latches the ground voltage VSS when the clock enable signal cke_clk is alow level, and then (3) ouputs the latch signal cke_rd wta by latchingthe latch signal cke_cas when the end pulse signal rd_wt_apcg_end isoutputted from the end pulse generation section 4100. That is, the latchsignal cke_rd_wta outputted from the latch section 4220 remains in ahigh level during an active mode operation and changes to a low levelwhen the active mode operation is ended.

Furthermore, the latch section 4230 comprises: an inverter 4231 forreceiving the power-up signal pwrup; a latch 4232 for logicallycombining the output signal of the inverter 4231, the end pulse signalrd_wt_apcg_end, and the CAS pulse signal casp6 and selectively latchingthe output signal of the inverter 4231, the end pulse signalrd_wt_apcg_end, and the CAS pulse signal casp6; and an inverter 4233 forreceiving the output signal of the latch 4232 and outputting a latchsignal en_lat.

The latch section 4230 configured in this way outputs the latch signalen_lat through the inverter 4231, the latch 4232 and the inverter 4233.Namely, the latch signal en_lat outputted from the latch section 4230 ischanged from a low level to a high level when the CAS pulse signal casp6is a high level, and the latch signal en_lat is thereafter changed froma high level to a low level when the output signal of the inverter 4132is a high level.

Moreover, the combining section 4240 comprises: a NAND gate 4241 forNANDing the latch signal cke_rd_wta and the latch signal en_lat; and aNAND gate 4242 for NANDing the output signal of the NAND gate 4241 andthe clock enable signal cke_clk and outputting the clock control signalcke_ctrl2.

The combining section 4240 configured in this way outputs the clockcontrol signal cke_ctrl2 of a low level for controlling the ending ofthe active mode operation, when both the latch signal cke_rd_wta and thelatch signal en_lat are a low level and the clock enable signal cke_clkis a high level.

As described above, the control circuit 4000 according to an embodimentof the present invention outputs the clock control signal cke_ctrl2through the end pulse generation section 4100 and the clock controlsignal generation section 4200. Further, the clock control signalcke_ctrl2 outputted from the control circuit 4000 according to anembodiment of the present invention is inputted to the clock enablegeneration circuit 5000, and is used to generate the clock enable signalcke_com1 for controlling the internally operating clocks employed in theactive mode operation.

Referring to FIG. 8, the clock enable generation circuit 5000 accordingto an embodiment of the present invention comprises:

(1) an enable signal generation section 5100 for outputting the clockenable signal cke_com for turning off the command and address buffers,by latching the clock control signal cke_ctrl1 when the external clockpulse signal clkp is low level;

(2) an enable signal generation section 5200 for outputting the clockenable signal cke_clk for controlling the internally operating clocksexcluding those employed in the active mode operation, by buffering theclock control signal cke_ctrl1; and

(3) an enable signal generation section 5300 for outputting the clockenable signal cke_com1 for disabling the internally operating clocksemployed in the active mode operation, by buffering the clock controlsignal cke_ctrl2 outputted from the control circuit 4000.

Here, the enable signal generation section 5100 comprises: an inverter5101 for receiving the power-up signal pwrup; an NMOS transistor 5102for determining whether to output a ground voltage VSS depending on theoutput signal of the inverter 5101; a latch 5103 for latching the clockcontrol signal cke_ctrl1 when the power-up signal pwrup is disabled andthe ground voltage VSS when the power-up signal pwrup is enabled; atransfer gate 5104 for outputting the output signal of the latch 5103when the clock pulse signal clkp is a low level; a latch 5105 forlatching the output signal of the transfer gate 5104; and an inverter5106 for receiving the output signal of the latch 5105 and outputtingthe clock enable signal cke_com.

Also, the enable signal generation section 5200 comprises: an inverter5201 for receiving the clock control signal cke_ctrl1 when the power-upsignal pwrup is disabled and the ground voltage VSS when the power-upsignal pwrup is enabled; an inverter 5202 for receiving the outputsignal of the inverter 5201; and an inverter 5203 for receiving theoutput signal of the inverter 5202 and outputting the clock enablesignal cke_clk.

The enable signal generation section 5300 comprises: an inverter 5301for receiving the clock control signal cke_ctrl2; a NAND gate 5302 forNANDing the output signal of the inverter 5202 and the output signal ofthe inverter 5301; and an inverter for receiving the output signal ofthe NAND gate 5302 and outputting the clock enable signal cke_com1.

As described above and according to an embodiment of the presentinvention, when entering into a power-down mode, the clock enablesignals cke_com, cke_clk, and cke_com1 (which are for turning off thecommand and address buffers and for disabling all internally operatingclocks) are generated through the clock enable buffer unit 1000, theexternal clock buffer unit 2000, the latch unit 3000, the controlcircuit 4000, and the clock enable generation circuit 5000. Thesemiconductor memory device according to an embodiment of the presentinvention thus operates differently depending on the operation type of aread operation, a read operation with an auto-precharge command, a writeoperation, or a write operation with an auto-precharge command asdescribed in detail below.

FIG. 9 is a timing diagram explaining entry to a power-down mode from aread operation in the semiconductor memory device according to anembodiment of the present invention.

As already mentioned above, the operations performed for entering into apower-down mode from a read operation or from a read operation with anauto-precharge command are same, and thus the same descriptions for eachof the above will not be redundantly repeated.

Hereafter, the procedure for entering into a power-down mode in a readoperation in the semiconductor memory device according to an embodimentof the present invention will be described in detail with reference toFIGS. 7-9.

First, in the semiconductor memory device according to an embodiment ofthe present invention, when a power-down mode entry command is inputtedafter a read command RD is inputted but before read data is outputtedthrough an output buffer DQ, the latch section 4210 latches the clockenable signal cke_clk that is outputted from the clock enable generationcircuit 5000 using the CAS pulse signal casp6 generated by the readcommand RD. At this time, since the semiconductor memory deviceaccording to an embodiment of the present invention is not operating inthe power-down mode, the clock enable signal cke_clk outputted from theclock enable generation circuit 5000 is in a low level. Accordingly, thelatch section 4210 latches the clock enable signal cke_clk outputtedfrom the clock enable generation circuit 5000 and outputs the latchsignal cke_cas of a high level.

Next, in the semiconductor memory device according to an embodiment ofthe present invention, the read/auto-precharge end pulse signalrd_apcg_end is generated in the buffer section 4110 at the time the offsignal outoff is disabled. Here, the off signal outoff remains in a highlevel when being disabled but becomes enabled (i.e., changes to a lowlevel) when outputting data to the output buffer DQ. Then, the offsignal outoff is disabled by a DLL clock rclk_dll after outputting thedata by a burst length. Next, the combining section 4130 outputs the endpulse signal rd_wt_apcg_end, which is the same as theread/auto-precharge end pulse signal rd_apcg_end.

Thereupon, the latch section 4220 of the semiconductor memory deviceaccording to an embodiment of the present invention generates the latchsignal cke_rd_wta by latching the latch signal cke_cas using the endpulse signal rd_wt_apcg_end. At this time, the latch signal cke_rd_wtais changed to a low level through the latch 4225. Accordingly, the clockcontrol signal cke_ctrl2 is changed to a low level through the combiningsection 4240, and thereafter, the clock enable signal cke_com1 ischanged to a high level through the enable signal generation section5300.

FIG. 10 is a timing diagram explaining entry to the power-down mode froma write operation in the semiconductor memory device according to anembodiment of the present invention, and FIG. 11 is a timing diagramexplaining entry to the power-down mode from a write operation with anauto-precharge command in the semiconductor memory device according toan embodiment of the present invention.

As shown in FIG. 10, in the semiconductor memory device according to anembodiment of the present invention, the entry to the power-down mode ina write operation is implemented basically in the same manner as theentry to the power-down mode in a read operation, but the write endsignal yblend is used in place of the off signal outoff. Here, the writeend signal yblend is a signal that generates a high level pulse after aseries of operations—more specifically, after a write command followedby an lapse of a write latency WL, which is followed by inputting ofdata by a burst length, and thereafter the lapse of the write dataprocessing time tWTR.

Therefore, when a power-down mode entry command is inputted during awrite operation, the semiconductor memory device according to anembodiment of the present invention enters into the power-down modeafter a series of operations—more specifically, after the write commandis inputted using the write end signal yblend, and after the lapse ofthe write latency WL, followed by inputting of the data by the burstlength, and thereafter the lapse of the write data processing time tWTR.

Further, as shown in FIG. 11, in the semiconductor memory deviceaccording to an embodiment of the present invention, the entry to thepower-down mode in a write operation with an auto-precharge command isimplemented basically in the same manner as the entry to the power-downmode in a write operation, but the auto-precharge signal apcg is used inplace of the write end signal yblend.

That is, when the power-down mode entry command is inputted during awrite operation with an auto-precharge command, the semiconductor memorydevice according to an embodiment of the present invention enters into apower down mode after the write operation is ended using theauto-precharge signal apcg and after one clock calculated based on theclock for performing auto-precharge.

Hence, in order to enter into a power-down mode during an active modeoperation, the semiconductor device according to an embodiment of thepresent invention generates the clock enable signal cke_com1 of a highlevel after all active mode operations are ended and disables the clocksignals used in the active mode operation.

At this time, the semiconductor memory device according to an embodimentof the present invention utilizes the read disable signal wt_rdb inorder to distinguish the write operation with an auto-precharge commandand the read operation with an auto-precharge command.

Describing this in detail with reference to FIGS. 7-11, the buffersection 4120 outputs the write/auto-precharge end pulse signalwt_apcg_end of a high level only when the power-down mode entry commandis inputted during a write operation or a write operation with anauto-precharge command through the NAND gate 4122.

In other words, in the event the power-down mode entry command isinputted during a write operation, the NAND gate 4122 NANDs the writeend signal yblend and the read disable signal wt_rdb and outputs a lowlevel signal. Thereafter, the inverter 4123 inverts the output signal ofthe NAND gate 4122 and outputs the write/auto-precharge end pulse signalwt_apcg_end of a high level.

Similarly, in the event the power-down mode entry command is inputtedduring a write operation with an auto-precharge command, the NAND gate4122 NANDs the auto-precharge signal apcg and the read disable signalwt_rdb and outputs a low level signal. Thereafter, the inverter 4123inverts the output signal of the NAND gate 4122 and outputs thewrite/auto-precharge end pulse signal wt_apcg_end of a high level.

On the other hand, the semiconductor memory device according to anembodiment of the present invention does not generate the clock enablesignal cke_com1 when it enters a power-down mode without a readoperation, a read operation with an auto-precharge command, a writeoperation, or a write operation with an auto-precharge command.

Describing this in detail with reference to FIGS. 7 through 11, in thecase of entering a power-down mode without a read operation, a readoperation with an auto-precharge command, a write operation, or a writeoperation with an auto-precharge command, the end pulse generationsection 4100 outputs the end pulse signal rd_wt_apcg_end of a low level.Since the transfer gate 4221 of the latch section 4220 is turned off anddoes not output the latch signal cke_cas, the control circuit 4000 doesnot output the clock control signal cke_ctrl2.

As described above, the semiconductor memory device according to anembodiment of the present invention realizes the control circuit 4000,which is simpler than the conventional counterpart, to performoperations utilizing the control signals of an active mode operation inthe event a power-down mode entry command is inputted during the activemode operation. Namely, in the event a power-down mode entry command isinputted during an active mode operation, all internally operatingclocks used in the active mode operation are disabled through thecontrol circuit 4000, which receives the control signals employed in theactive mode operation.

Consequently, in the event a power-down mode entry command is inputtedduring an active mode operation, all clocks used in the active modeoperation can be disabled through the control circuit 4000 having thesimple configuration without the need to count any of the CAS pulsesignal casp6, the CAS latency CL, the write latency WL and the writerecovery time tWR using a plurality of D flip-flops and multiplexers.

As a result, the semiconductor memory device according to an embodimentof the present invention reduces the area occupied by the controlcircuit 4000 and lowers the current consumption by utilizing the controlcircuit 4000 that is simpler in design and utilizes the control signalsemployed in an active mode operation.

As is apparent from the above description, the present invention doesnot require a control circuit, which comprises a plurality of separate Dflip-flops for counting a CAS pulse signal casp6, a CAS latency CL, awrite latency WL and a write recovery time tWR, and a plurality ofseparate multiplexers, to operate in response to a power down-mode entrycommand received during an active mode operation. Instead, the presentinvention provides a simple control circuit configured to utilize thecontrol signals employed in an active mode operation to operate when apower-down mode entry command is received during an active modeoperation. As a result, the area occupied by the control circuitaccording to the present invention is less, and the amount of powerconsumed is less.

Although a preferred embodiment of the present invention has beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

1. A semiconductor memory device comprising: a first latch circuitoutputting a first clock control signal for controlling internallyoperating clocks by latching an external clock signal and a firstexternal clock enable signal, wherein the level of the first externalclock enable signal is changed by entering a power-down mode; a controlcircuit outputting a second clock control signal when a power-down modeentry command is received during an read operation in an active mode,wherein the second clock control signal for controlling internallyoperating clocks employed in the active mode is generated by an offsignal which is enabled while all data corresponding the read operationis inputted; a clock enable generation circuit receiving the first andsecond clock control signals and the external clock signal andoutputting clock enable signals including a signal which is enabledafter performing an operation related all command corresponding to theread operation, wherein the signal is generated by the first and secondclock control signals when the external clock signal is disable.
 2. Thedevice of claim 1, wherein the control circuit comprises: an end pulsegeneration section for outputting an end pulse signal for ending theactive mode operation, by buffering the off signal; and a clock controlsignal generation section for outputting the second clock control signalfor controlling the end of the active mode operation, by latching theend pulse signal and one of the clock enable signals for controlling theinternally operation clocks excluding those employed in the active mode.3. The device of claim 1, wherein the clock enable generation circuitcomprises: a first enable signal generation section outputting a firstclock enable signal by latching the first clock control signal when thesecond clock pulse signal is low level; a second enable signalgeneration section outputting a second clock enable signal by bufferingthe first clock control signal; and a third enable signal generationsection outputting the signal by buffering the second clock controlsignal.
 4. A semiconductor memory device comprising: a first latchcircuit outputting a first clock control signal for controllinginternally operating clocks by latching an external clock signal and afirst external clock enable signal, wherein the level of the firstexternal clock enable signal is changed by entering a power-down mode; acontrol circuit outputting a second clock control signal when apower-down mode entry command is received during a write operation in anactive mode, wherein the second clock control signal for controllinginternally operating clocks employed in the active mode is generated bya write end signal which is enabled after the lapse of a write dataprocessing time in the write operation; a clock enable generationcircuit receiving the first and second clock control signals and theexternal clock signal and outputting clock enable signals including asignal which is enabled after performing an operation related allcommand corresponding to the write operation, wherein the signal isgenerated by the first and second clock control signals when theexternal clock signal is disable.
 5. The device of claim 4, wherein thecontrol circuit comprises: an end pulse generation section foroutputting an end pulse signal for ending the active mode operation, bybuffering the write end signal; and a clock control signal generationsection for outputting the second clock control signal for controllingthe end of the active mode operation, by latching the end pulse signaland one of the clock enable signals for controlling the internallyoperation clocks excluding those employed in the active mode.
 6. Thedevice of claim 4, wherein the clock enable generation circuitcomprises: a first enable signal generation section outputting a firstclock enable signal by latching the first clock control signal when thesecond clock pulse signal is low level; a second enable signalgeneration section outputting a second clock enable signal by bufferingthe first clock control signal; and a third enable signal generationsection outputting the signal by buffering the second clock controlsignal.
 7. A semiconductor memory device comprising: a first latchcircuit outputting a first clock control signal for controllinginternally operating clocks by latching an external clock signal and afirst external clock enable signal, wherein the level of the firstexternal clock enable signal is changed by entering a power-down mode; acontrol circuit outputting a second clock control signal when apower-down mode entry command is received during a write operation withan auto-precharge in an active mode, wherein the second clock controlsignal for controlling internally operating clocks employed in theactive mode is generated by an auto-precharge signal which is enabledafter the lapse of a write data processing time in the write operation;a clock enable generation circuit receiving the first and second clockcontrol signals and the external clock signal and outputting clockenable signals including a signal which is enabled after performing anoperation related all command corresponding to the write operation withauto-precharge, wherein the signal is generated by the first and secondclock control signals when the external clock signal is disable.
 8. Thedevice of claim 7, wherein the control circuit comprises: an end pulsegeneration section for outputting an end pulse signal for ending theactive mode operation, by buffering the auto-precharge signal; and aclock control signal generation section for outputting the second clockcontrol signal for controlling the end of the active mode operation, bylatching the end pulse signal and one of the clock enable signals forcontrolling the internally operation clocks excluding those employed inthe active mode.
 9. The device of claim 7, wherein the clock enablegeneration circuit comprises: a first enable signal generation sectionoutputting a first clock enable signal by latching the first clockcontrol signal when the second clock pulse signal is low level; a secondenable signal generation section outputting a second clock enable signalby buffering the first clock control signal; and a third enable signalgeneration section outputting the signal by buffering the second clockcontrol signal.